The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jul. 31, 2003
Applicant:
Inventors:
Luigi Colombo, Dallas, TX (US);
Manuel Quevedo-Lopez, Denton, TX (US);
James J. Chambers, Dallas, TX (US);
Mark R. Visokay, Richardson, TX (US);
Antonio L. P. Rotondaro, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract
High-k transistor gate structures and fabrication methods therefor are provided, wherein a gate dielectric interface region near a semiconductor substrate is provided with very little or no nitrogen, while the bulk high-k dielectric is provided with a uniform nitrogen concentration.
Quick Actions:
Colombo, Luigi. (2004). High-k gate dielectric with uniform nitrogen profile and methods for making the same (U.S. Patent No. 6809370). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6809370
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile