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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7943479 B1

PDFFull Text
Date of Patent:
May. 17, 2011

Filed:

Aug. 19, 2008

Integration of high-k metal gate stack into direct silicon bonding (dsb) hybrid orientation technology (hot) pmos process flow

Applicants:

Angelo Pinto, Allen, TX (US);

Manuel A. Quevedo-lopez, Richardson, TX (US);

Inventors:

Angelo Pinto, Allen, TX (US);

Manuel A. Quevedo-Lopez, Richardson, TX (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Warren L. Franz

Wade J. Brady, III

Frederick J. Telecky, Jr.

Primary Examiner:

Caridad M Everhart

Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation layer, and a second crystal orientation layer, and a border region disposed between the first and second crystal orientations. A high-k metal gate stack is deposited over the first crystal orientation layer that comprises an insulation layer, a high-k dielectric layer, a first metal layer, and a second metal layer thereon.

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Pinto, Angelo. (2011). Integration of high-k metal gate stack into direct silicon bonding (dsb) hybrid orientation technology (hot) pmos process flow (U.S. Patent No. 7943479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7943479

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