The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Apr. 13, 2018
Applicants:

Board of Regents, the University of Texas System, Austin, TX (US);

Nanoholdings Llc, Rowayton, CT (US);

Inventors:

Jesus I. Mejia-Silva, Frisco, TX (US);

Manuel Quevedo-Lopez, Richardson, TX (US);

Bruce E. Gnade, Lewisville, TX (US);

Carlos Hugo Avila Avendano, Richardson, TX (US);

Bhabendra K. Pradhan, Rowayton, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14663 (2013.01); G01T 1/2018 (2013.01); H01L 27/1461 (2013.01); H01L 27/14616 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H01L 27/14696 (2013.01); H01L 29/78675 (2013.01); H01L 31/03925 (2013.01); H01L 31/03926 (2013.01);
Abstract

A thin film radiation detection device includes a photosensitive p-n diode, a polysilicon thin film transistor (TFT), a radiation detection layer, and a substrate. The photosensitive p-n diode and the TFT are formed on the substrate. The radiation detection layer is formed above the substrate and receives multiple radiations. The photosensitive p-n diode receives a conversion output signal from the radiation detection layer and generates a detector signal. The TFT generates an amplified signal based on the detector signal.


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