Company Filing History:

7 out of 2,426

Stmicroelectronics S.a.

Years Active: 2002-2008

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7396736 - Magnetic sensor of very high sensitivity (2008-07-08),

2. 7224015 - Method for making a stack of capacitors, in particular for dynamic random access memory [DRAM] (2007-05-29),

3. 7038285 - Very high sensitivity magnetic sensor (2006-05-02),

4. 6727186 - Method for lateral etching with holes for making semiconductor devices (2004-04-27),

5. 6713356 - Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers (2004-03-30),

6. 6670686 - Integrated sound transmitter and receiver, and corresponding method for making same (2003-12-30),

7. 6607968 - Method for making a silicon substrate comprising a buried thin silicon oxide film (2003-08-19),

8. 6583451 - Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained (2003-06-24),

9. 6555482 - Process for fabricating a MOS transistor having two gates, one of which is buried and corresponding transistor (2003-04-29),

10. 6495403 - Gate-all-around semiconductor device and process for fabricating the same (2002-12-17),

Title: The Innovative Mind of Malgorzata Jurczak: A Pioneer in Magnetic Sensors and Dynamic Memories

Introduction: Malgorzata Jurczak, a distinguished inventor based in Grenoble, France, has made significant contributions in the field of technology with her innovative inventions. With a portfolio comprising ten patents, she stands out as a female inventor whose work has had a profound impact on magnetic sensors and dynamic random-access memory technologies.

Latest Patents: Among her notable recent inventions is the "Magnetic Sensor of Very High Sensitivity." This invention features a magnetic sensor that employs a thin deformable membrane made of conductive material to form one plate of a capacitor, conducting electric current. A second capacitor plate consists of a doped region of a semiconductor substrate, separated by a gaseous dielectric layer. The membrane's deformation is induced by the Lorentz force, resulting in a sensitive measurement of magnetic fields. Furthermore, she has developed a "Method for Making a Stack of Capacitors," particularly useful for dynamic random access memory (DRAM). This innovative process involves forming a stack of alternate layers of germanium or SiGe alloy and polycrystalline silicon on a substrate, leading to advancements in memory technology.

Career Highlights: Throughout her career, Malgorzata has gained valuable experience while working with leading companies in the industry. Notably, she has been associated with STMicroelectronics and France Télécom, where she honed her skills and contributed her innovative ideas to drive technology forward.

Collaborations: Malgorzata Jurczak has collaborated with esteemed colleagues such as Thomas Skotnicki and Hervé Jaouen. These partnerships have led to fruitful exchanges of ideas and further enhancements of her pioneering inventions.

Conclusion: Malgorzata Jurczak exemplifies the spirit of innovation in technology. Her impressive track record of patents and notable projects showcases her commitment to advancing magnetic sensors and memory technologies. As she continues to push boundaries, her work will undoubtedly inspire future generations of inventors and engineers.

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