The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2007

Filed:

Nov. 10, 2000
Applicants:

Thomas Skotnicki, Crolles-Montfort, FR;

Malgorzata Jurczak, Grenoble, FR;

Catherine Mallardeau, Grenoble, FR;

Inventors:

Thomas Skotnicki, Crolles-Montfort, FR;

Malgorzata Jurczak, Grenoble, FR;

Catherine Mallardeau, Grenoble, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention concerns a method which consists in forming on a substrate () coated with a dielectric material layer () provided with a window (), a stack of successive layers alternately of germanium or SiGe alloy () and polycrystalline silicon (); selective partial elimination of the germanium or SiGe alloy layers, to form an tree-like structure; forming a thin layer of dielectric material () on the tree-like structure; and coating the tree-like structure with polycrystalline silicon (). The invention is useful for making dynamic random-access memories.


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