The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Mar. 20, 2001
Thomas Skotnicki, Crolles Montfort, FR;
Malgorzata Jurczak, Grenoble, FR;
Michel Haond, Crolles, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A method for making a MOS transistor includes forming a first gate within a silicon-on-insulator substrate, forming a semiconductor channel region transversely surmounting the first gate, and forming semiconductor drain and source regions on each side of the channel region. The semiconductor channel region and drain and source regions may be produced by epitaxy on an upper surface of the first gate. The channel region may be isolated from the upper surface of the first gate by forming a tunnel under the channel region and at least partially filling the tunnel with a first dielectric. The second gate is formed on the channel region and transverse to the channel region. The second gate may be separated from an upper surface of the channel region by a second dielectric.