Kanagawa, Japan

Makoto Koshimizu

USPTO Granted Patents = 10 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Kanagawa, JP (2015 - 2016)
  • Hitachinaka, JP (2020)
  • Ibaraki, JP (2023)
  • Tokyo, JP (2021 - 2024)

Company Filing History:


Years Active: 2015-2025

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10 patents (USPTO):Explore Patents

Title: Makoto Koshimizu: Inventor and Innovator in Semiconductor Devices

Introduction:

Makoto Koshimizu, a respected inventor and innovator in the field of semiconductor devices, has made significant contributions to the industry. With a location in Kanagawa, JP, Koshimizu has paved his way through several patented inventions, showing a deep understanding of semiconductor technology. This article delves into his latest patents, career highlights, and notable collaborations.

Latest Patents:

Koshimizu's recent patents primarily focus on semiconductor devices and their manufacturing processes. One of his latest inventions involves a semiconductor device and its manufacturing method. The patent describes the formation of various regions within the device, including source and drain regions, buried insulating film, gate insulating film, and gate electrodes. Notably, this patent introduces crystal plane alignment, with the source region's first side surface aligned to the (111) plane and the bottom surface aligned to the (100) plane.

Another recent patent details a different manufacturing technique for semiconductor devices. This invention emphasizes the creation of via holes in an interlayer insulating film and the embedding of metal wiring layers and plug layers within these holes. Koshimizu's invention incorporates specific elements such as tungsten, titanium, titanium nitride, tantalum, molybdenum, and aluminum to enhance the performance and functionality of the semiconductor device.

Career Highlights:

Makoto Koshimizu boasts an accomplished career with numerous notable achievements. His work has significantly impacted the semiconductor industry, particularly in advancing the manufacturing techniques and performance of semiconductor devices. With a total of six patents under his belt, Koshimizu has demonstrated a deep expertise in semiconductor technology and a keen eye for innovation.

Collaborations:

Working at Renesas Electronics Corporation, Koshimizu has had the opportunity to collaborate with fellow industry experts. Among his notable collaborations are those with Hitoshi Matsuura and Yoshito Nakazawa. These partnerships have likely led to the exchange of ideas, cross-pollination of knowledge, and advancements in semiconductor technology. Koshimizu's ability to work effectively within a team demonstrates his commitment to driving innovation collectively.

Conclusion:

Makoto Koshimizu's contribution to the field of semiconductor devices cannot be understated. Through his patented inventions and long-standing career at Renesas Electronics Corporation, Koshimizu has exemplified a deep understanding of semiconductor technology. His advancements in manufacturing processes and crystal plane alignment have paved the way for enhanced semiconductor device performance. Collaborating with industry peers, Koshimizu's impact expands beyond his individual achievements. We eagerly look forward to his future contributions that will continue driving innovation in the semiconductor industry.

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