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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790388 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Jul. 16, 2018

Semiconductor device and method for manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Makoto Koshimizu, Hitachinaka, JP;

Komaki Inoue, Hitachinaka, JP;

Hideki Niwayama, Hitachinaka, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/266 (2006.01); H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0611 (2013.01); H01L 29/0653 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/42376 (2013.01); H01L 29/6659 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 21/0217 (2013.01); H01L 21/0274 (2013.01); H01L 21/2658 (2013.01); H01L 21/28035 (2013.01); H01L 21/28525 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01); H01L 29/4916 (2013.01); H01L 29/665 (2013.01);
Abstract

A semiconductor device with improved performance. A channel region and a well region having a lower impurity concentration than the channel region are formed in a semiconductor substrate on the source region side of an LDMOS. The channel region partially overlaps a gate electrode in plan view. In the gate length direction of the LDMOS, an end of the well region in the channel region is at a distance from the end of the gate electrode on the source region side of the LDMOS in a manner to be away from the gate electrode.

Find Patent Forward Citations

Quick Actions:

Koshimizu, Makoto. (2020). Semiconductor device and method for manufacturing the same (U.S. Patent No. 10790388). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10790388

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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