The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Jul. 16, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/266 (2006.01); H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0611 (2013.01); H01L 29/0653 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/42376 (2013.01); H01L 29/6659 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 21/0217 (2013.01); H01L 21/0274 (2013.01); H01L 21/2658 (2013.01); H01L 21/28035 (2013.01); H01L 21/28525 (2013.01); H01L 21/31116 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01); H01L 29/4916 (2013.01); H01L 29/665 (2013.01);
Abstract
A semiconductor device with improved performance. A channel region and a well region having a lower impurity concentration than the channel region are formed in a semiconductor substrate on the source region side of an LDMOS. The channel region partially overlaps a gate electrode in plan view. In the gate length direction of the LDMOS, an end of the well region in the channel region is at a distance from the end of the gate electrode on the source region side of the LDMOS in a manner to be away from the gate electrode.