The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Oct. 19, 2023
Renesas Electronics Corporation, Tokyo, JP;
Makoto Koshimizu, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The source region, drain region, buried insulating film, gate insulating film, and gate electrode of the semiconductor device are formed in a main surface of a semiconductor substrate. The buried insulating film is buried in a first trench formed between the source and drain regions. The first trench has a first side surface and a first bottom surface. The first side surface faces the source region in a first direction extending from one of the source and drain regions to the other. The first bottom surface is connected to the first side surface and is along the main surface of the semiconductor substrate. A crystal plane of a first surface of the semiconductor substrate, which is the first side surface of the first trench, is (111) plane. A crystal plane of a second surface of the semiconductor substrate, which is the bottom surface of the first trench, is (100) plane.