The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
May. 21, 2015
Renesas Electronics Corporation, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In an IGBT, defects generated by ion implantation for introduction of the P-type collector region or N-type buffer region into the N-type drift region near the N-type buffer region remain to improve the switching speed, however the leak current increases by bringing a depletion layer into contact with the crystal defects at the off time. To avoid this, an IGBT is provided which includes an N-type buffer region having a higher concentration than that of an N-type drift region and being in contact with a P-type on its backside, and a defect remaining region provided near the boundary between the N-type buffer region and the N-type drift region. The N-type drift region located on the front surface side with respect to the defect remaining region is provided with an N-type field stopping region having a higher concentration than that of the N-type drift region.