Introduction: Makoto Furuno, based in Atsugi, Japan, is a prominent inventor with a significant portfolio of 42 patents. His innovative work primarily focuses on semiconductor technology, especially related to deposition methods and the manufacturing of semiconductor devices.

Latest Patents: One of Makoto Furuno's latest patents involves a deposition method wherein a gallium oxide film is formed using a direct current (DC) sputtering technique. This invention aims to enhance the manufacturing process of semiconductor devices, particularly utilizing gallium oxide as an insulating layer - critical for functions such as gate insulating layers of transistors. The method specifies that an insulating film is created using either a DC sputtering method or a pulsed DC sputtering method, incorporating an oxide target that includes gallium oxide (GaO). The specifications outline parameters for the oxide, ensuring optimal electrical conductivity and performance in an oxygen or mixed atmosphere of oxygen and rare gases like argon.

Career Highlights: Throughout his career, Makoto Furuno has made substantial advancements in semiconductor processes by developing methods that improve the efficiency and effectiveness of material deposition techniques. His innovative approaches have significantly contributed to the semiconductor industry, enhancing device performance and reliability.

Collaborations: Makoto Furuno has collaborated with notable individuals in the field, including Shunpei Yamazaki and Keitaro Imai. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and leads to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion: Makoto Furuno's contributions to the semiconductor industry through his extensive patent portfolio and collaborative efforts exemplify his commitment to innovation. His work continues to influence the future of semiconductor technology, paving the way for advancements that meet the growing demands of modern electronics.

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