The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Nov. 19, 2012
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Satoshi Toriumi, Kanagawa, JP;

Makoto Furuno, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B08B 7/04 (2006.01); H01L 21/20 (2006.01); B08B 7/00 (2006.01); C23C 16/44 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01); H01L 29/16 (2006.01); H01M 10/052 (2010.01); H01M 4/131 (2010.01); H01M 4/62 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B08B 7/04 (2013.01); H01L 21/20 (2013.01); B08B 7/0071 (2013.01); B82Y 40/00 (2013.01); B08B 7/00 (2013.01); C23C 16/4405 (2013.01); C23C 16/0281 (2013.01); C23C 16/26 (2013.01); H01L 29/1606 (2013.01); H01M 10/052 (2013.01); H01M 4/131 (2013.01); H01M 4/625 (2013.01); H01L 29/66431 (2013.01); H01L 29/7781 (2013.01); Y02E 60/122 (2013.01);
Abstract

A method for cleaning a hot-wall type film formation apparatus having a batch processing system with industrially high mass productivity is provided. In the method, a carbon film deposited on an inner wall or the like of a reaction chamber of the apparatus is removed efficiently in a short time. To remove the carbon film deposited on the inner wall of the reaction chamber by a thermal CVD method, the reaction chamber is heated at a temperature higher than or equal to 700° C. and lower than or equal to 800° C., and oxygen is introduced into the reaction chamber.


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