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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9698008 B1

PDFFull Text
Date of Patent:
Jul. 04, 2017

Filed:

Apr. 07, 2015

Deposition method and method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Junichiro Sakata, Kanagawa, JP;

Makoto Furuno, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/8232 (2006.01); H01L 29/786 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 27/06 (2006.01); H01L 27/11521 (2017.01); H01L 27/11551 (2017.01); H01L 27/1156 (2017.01); H01L 49/02 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02266 (2013.01); C23C 14/0036 (2013.01); C23C 14/08 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); H01L 21/02112 (2013.01); H01L 21/8232 (2013.01); H01L 27/0688 (2013.01); H01L 27/1156 (2013.01); H01L 27/11521 (2013.01); H01L 27/11551 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 28/60 (2013.01); H01L 29/4908 (2013.01); H01L 29/66477 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78645 (2013.01);
Abstract

An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaO). The oxide target includes GaO, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

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