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For the Inventor, By the Inventor

Taichung, Taiwan

Lih-Wei Lin

This inventor holds 22 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Resistive Memory Technology. Top assignees: Winbond Electronics Corporation, Windbond Electronics Corp.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lih-Wei Lin. Retrieved from https://idiyas.com/inventor/lih-wei-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0


Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Hsinchu, TW (2017 - 2022)
  • Taichung, TW (2017 - 2023)

Company Filing History:

goldMedal21 out of 2,114 
 
Winbond Electronics Corporation
 patents
silverMedal1 out of 106 
 
Windbond Electronics Corp.
 patents

Years Active: 2017-2026

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Areas of Expertise:
Resistive Memory
Memory Array
Testing Method
Data Writing
Physical Unclonable Function
Memory Cell
Memory Device
Error-Correcting Code
Programming Methods
Data Access
Voltage Adjustment
Optimal Operating Condition
22 patents (USPTO):Explore Patents
1. 12730147 - Testing circuit for testing electrical devices and device under test (2026-09-08),
2. 12682947 - Memory array and memory cell used as PUF memory (2026-07-14),
3. 12474405 - Test device and testing method for memory device (2025-11-18),
4. 11776636 - Memory array and operation method thereof (2023-10-03),
5. 11437101 - Resistive memory storage apparatus and operating method thereof (2022-09-06),
6. 11289160 - Memory device and data writing method (2022-03-29),
7. 11175988 - Memory storage device and data access method (2021-11-16),
8. 10978149 - Resistive memory apparatus and adjusting method for write-in voltage thereof (2021-04-13),
9. 10818353 - Method for ripening resistive random access memory (2020-10-27),
10. 10783962 - Resistive memory storage apparatus and writing method thereof including disturbance voltage (2020-09-22),
11. 10726890 - Resistive memory apparatus and operating method thereof (2020-07-28),
12. 10643698 - Operating method of resistive memory storage apparatus (2020-05-05),
13. 10636507 - Memory-testing methods for testing memory having error-correcting code (2020-04-28),
14. 10490275 - Resistive memory storage apparatus and writing method thereof including disturbance voltage (2019-11-26),
15. 10490272 - Operating method of resistive memory element (2019-11-26),

Title: Inventor Lih-Wei Lin: Revolutionizing Technology in Taichung

Introduction: Lih-Wei Lin is a visionary inventor based in Taichung, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Lin holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his innovative spirit and commitment to driving progress in these fields.

Career Highlights: With a career spanning over two decades, Lin has worked with leading tech companies and research institutions to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Lin has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing that has led to the development of pioneering technologies.

Conclusion: Inventor Lih-Wei Lin's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and shape the future of the tech industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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