Memory array and memory cell used as puf memory

Abstract

A memory array includes word line sets, each having a first, second, and third word lines; bit line sets, each having a first and second bit lines; and memory cells, each of the memory cells dispose at intersections of each of the word line sets and each of the bit line sets. Each of the memory cells has a first, second, and third control ends that are respectively coupled to the first, second, and third word lines of a corresponding word line set, and a first and second ends that are respectively coupled to the first and second bit lines of a corresponding bit line set. In a differential mode, reading is performed according to reading currents of the first and second ends. In a single-ended mode, reading is performed according to the read currents of the first or second ends and the reference current.