Pingtung, Taiwan

Shih Jyun Chen

This inventor holds 1 USPTO granted patent. Top assignee: Winbond Electronics Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih Jyun Chen. Retrieved from https://idiyas.com/inventor/shih-jyun-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Shih Jyun Chen in Memory Technology

Introduction

Shih Jyun Chen is a notable inventor based in Pingtung, Taiwan. He has made significant contributions to the field of memory technology, particularly with his innovative designs that enhance memory performance and security.

Latest Patents

Shih Jyun Chen holds a patent for a "Memory array and memory cell used as PUF memory." This invention features a memory array that includes word line sets, each having a first, second, and third word lines, along with bit line sets that consist of first and second bit lines. The memory cells are strategically positioned at the intersections of the word line sets and bit line sets. Each memory cell is equipped with control ends that are coupled to the corresponding word lines and bit lines. The invention allows for reading in both differential and single-ended modes, enhancing the efficiency of memory operations.

Career Highlights

Shih Jyun Chen is currently employed at Winbond Electronics Corporation, where he continues to develop cutting-edge memory technologies. His work at Winbond has positioned him as a key player in the advancement of memory solutions.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Shih Jyun Chen's innovative contributions to memory technology, particularly through his patented designs, demonstrate his expertise and commitment to advancing the field. His work at Winbond Electronics Corporation continues to influence the development of secure and efficient memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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