San Ramon, CA, United States of America

Lidia Vereen

USPTO Granted Patents = 6 

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2013-2020

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6 patents (USPTO):Explore Patents

Title: Lidia Vereen: A Pioneer in Memory Structure Innovations

Lidia Vereen is a distinguished inventor based in San Ramon, CA, with a remarkable portfolio of six patents to her name. Her contributions to the field of memory structures have significantly influenced the technology sector, particularly in manufacturing efficient memory arrays.

Latest Patents

Among her notable inventions is the patented method related to vertical cross-point memory arrays. This innovation includes a sophisticated approach to manufacturing memory structures by forming multiple vertically-stacked horizontal line layers. The invention interleaves a series of electrically conductive vertical lines with corresponding horizontal lines, effectively creating a memory film at the intersections of these lines. Notably, the unique configuration allows for a unit memory cell footprint of just 2F, enhancing the efficiency and compactness of memory storage solutions.

Career Highlights

Throughout her career, Lidia has made impactful contributions while working at renowned technology firms, including Unity Semiconductor Corporation and Rambus Inc. Her innovative work has played a vital role in advancing memory technology, making her a notable figure in the industry.

Collaborations

Lidia has collaborated with esteemed professionals in her field, including Bruce Lynn Bateman and Louis C. Parrillo. These partnerships have not only enriched her work but also fostered an environment of creativity and innovation that has propelled her inventions to new heights.

Conclusion

Lidia Vereen's dedication to advancing memory technology through her inventive methods exemplifies the spirit of innovation. Her patents represent significant strides in the field and highlight her influence as a woman in technology. As she continues to develop new solutions, her contributions will undoubtedly play a crucial role in shaping the future of memory structures.

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