The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 11, 2014
Applicant:
Rambus Inc., Sunnyvale, CA (US);
Inventors:
Deepak Chandra Sekar, San Jose, CA (US);
Gary Bela Bronner, Los Altos, CA (US);
Christophe J. Chevallier, Palo Alto, CA (US);
Lidia Vereen, San Ramon, CA (US);
Philip F. S. Swab, Santa Rosa, CA (US);
Elizabeth Friend, Sunnyvale, CA (US);
Mehmet Gunhan Ertosun, Mountain View, CA (US);
Assignee:
Rambus Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5685 (2013.01); G11C 13/003 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 2013/0088 (2013.01); G11C 2213/72 (2013.01); G11C 2213/78 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01);
Abstract
A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element, and a two-terminal switching element. The first resistive memory element is electrically coupled to the second resistive memory element and to the switching element at a common node.