Liang-An Huang

Title: The Innovations of Liang-An Huang

Introduction

Liang-An Huang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced transistor designs that enhance the performance and efficiency of electronic devices.

Latest Patents

Among his latest patents is the invention titled "EDMOS and fabricating method of the same." This patent describes an extended drain metal oxide semiconductor transistor that includes a substrate, a gate, and doped regions for source and drain. The design features a thin gate dielectric layer and a thick gate dielectric layer that extends to contact the drain doped region. Another notable patent is for a "metal-oxide-semiconductor (MOS) transistor," which includes a substrate with trenches and a gate structure line that intersects with these trenches. This innovative design aims to improve the functionality of MOS transistors in various applications.

Career Highlights

Liang-An Huang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to push the boundaries of semiconductor technology and contribute to the development of cutting-edge electronic components.

Collaborations

Throughout his career, Liang-An has collaborated with talented individuals such as Yu-Chun Huang and Chin-Fu Lin. These partnerships have fostered innovation and have been instrumental in the successful development of his patented technologies.

Conclusion

Liang-An Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the advancement of electronic devices, showcasing the importance of innovation in technology.