The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Mar. 19, 2019
United Microelectronics Corp., Hsinchu, TW;
Hsiang-Hua Hsu, Kaohsiung, TW;
Liang-An Huang, Tainan, TW;
Sheng-Chen Chung, Tainan, TW;
Chen-An Kuo, Taoyuan, TW;
Chiu-Te Lee, Hsinchu County, TW;
Chih-Chung Wang, Hsinchu, TW;
Kuang-Hsiu Chen, Tainan, TW;
Ke-Feng Lin, Taipei, TW;
Yan-Huei Li, Taichung, TW;
Kai-Ting Hu, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.