Yan-Huei Li

Title: Yan-Huei Li: Innovator in Metal-Oxide-Semiconductor Technology

Introduction

Yan-Huei Li is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on metal-oxide-semiconductor (MOS) transistors. His expertise and dedication to advancing technology have earned him recognition in the industry.

Latest Patents

Yan-Huei Li holds a patent for a metal-oxide-semiconductor transistor and the method of fabricating the same. This invention involves a substrate with a plurality of trenches extending along a first direction, located on the top portion of the substrate. A gate structure line is positioned on the substrate, extending along a second direction that intersects with the first direction and crosses over the trenches. Additionally, the design includes a first doped line located at a first side of the gate structure line and a second doped line at the opposite side, both crossing over the trenches. This innovative approach enhances the performance and efficiency of MOS transistors.

Career Highlights

Yan-Huei Li is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in technology.

Collaborations

Some of his notable coworkers include Hsiang-Hua Hsu and Liang-An Huang. Their collaborative efforts have further propelled the development of innovative semiconductor solutions.

Conclusion

In summary, Yan-Huei Li is a distinguished inventor whose work in metal-oxide-semiconductor technology has made a significant impact in the field. His contributions continue to shape the future of semiconductor devices and their applications.