The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Nov. 05, 2013
United Microelectronics Corporation, Hsinchu, TW;
Liang-An Huang, Tainan, TW;
Yu-Chun Huang, Tainan, TW;
Chin-Fu Lin, Taichung, TW;
Yu-Ciao Lin, Tainan, TW;
Yu-Chieh Lin, Kaohsiung, TW;
Hsin-Liang Liu, Tainan, TW;
Chun-Hung Cheng, Kaohsiung, TW;
Yuan-Cheng Yang, Kaohsiung, TW;
Yau-Kae Sheu, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.