Company Filing History:
Years Active: 2014-2019
Title: Hsin-Liang Liu: Innovator in Semiconductor Technology
Introduction
Hsin-Liang Liu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gate oxide structures and shallow trench isolation methods. With a total of two patents to his name, Liu's work has had a notable impact on the industry.
Latest Patents
Liu's latest patents include a method for fabricating a gate oxide structure. This method involves forming a gate oxide layer on a substrate, where a region of the substrate is defined by a shallow trench isolation (STI) structure. The process includes covering the substrate with an oxide layer and using a mask layer to expose the oxide layer corresponding to the STI structure. A silicon spacer is formed on the sidewall of the opening, followed by a cleaning process to expose the substrate. An oxidation process is then performed to create the gate oxide layer, merging the silicon spacer with the edge of the gate oxide layer. Additionally, he has developed a fabricating method for shallow trench isolation structures, which involves etching processes to create shallow trenches in a substrate and filling them with dielectric material.
Career Highlights
Hsin-Liang Liu is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to contribute to advancements in semiconductor fabrication techniques. Liu's innovative approaches have positioned him as a key figure in his field.
Collaborations
Liu has collaborated with notable coworkers, including Shih-Yin Hsiao and Shu-Wen Lin. These collaborations have further enhanced the quality and impact of his inventions.
Conclusion
Hsin-Liang Liu's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as an influential inventor. His innovative methods continue to shape the future of the industry.