Tainan, Taiwan

Yu-Ciao Lin

USPTO Granted Patents = 1 

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of Yu-Ciao Lin in Semiconductor Technology

Introduction: Yu-Ciao Lin is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of shallow trench isolation structures. His innovative approach has led to advancements that are crucial for the development of high voltage devices.

Latest Patents: Yu-Ciao Lin holds a patent for a "Fabricating method of shallow trench isolation structure." This patent outlines a method that includes several steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Following this, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, resulting in the formation of a first shallow trench in the high voltage device area. Finally, a dielectric material is filled in the first shallow trench, thereby creating a first shallow trench isolation structure. This innovation is essential for enhancing the performance and reliability of semiconductor devices.

Career Highlights: Yu-Ciao Lin is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to groundbreaking technologies.

Collaborations: Among his notable coworkers are Liang-An Huang and Yu-Chun Huang. Their collective expertise in semiconductor technology has fostered an environment of innovation and creativity.

Conclusion: Yu-Ciao Lin's contributions to the field of semiconductor technology, particularly through his patent on shallow trench isolation structures, highlight his role as a key inventor in the industry. His work continues to influence advancements in high voltage devices and semiconductor manufacturing processes.

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