United Microelectronics Corp.

Yu-Ciao Lin

Chin-Fu Lin

Chun-Hung Cheng

Yau-Kae Sheu

Yu-Chieh Lin

Liang-An Huang

Yuan-Cheng Yang

Yu-Chun Huang

Hsin-Liang Liu

A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Fabricating method of shallow trench isolation structure

Growing community of inventors

Tainan, Taiwan

Yu-Ciao Lin