Li-Jung Liu

Title: Li-Jung Liu: Innovator in Field-Effect Transistor Technologies

Introduction

Li-Jung Liu is a renowned inventor based in Kaohsiung, Taiwan. With a substantial portfolio of 10 patents, he has made significant contributions to the field of semiconductor technology, specifically in the development of field-effect transistors (FETs).

Latest Patents

Among his latest innovations, Li-Jung Liu has developed a method to embed planar FETs with fin field-effect transistors (finFETs). This method involves a meticulous process where a semiconductor substrate is patterned to create a mesa and a fin. The trench isolation structure is formed over the semiconductor substrate, enclosing the mesa and the fin. The technique includes the formation of a first gate dielectric layer on the mesa, while the fin remains untouched. After creating the first gate dielectric layer, the trench isolation structure is recessed around the fin but not around the mesa. Subsequently, a second gate dielectric layer is deposited, which covers both the first gate dielectric layer at the mesa and further extends over the fin. The process concludes with the formation of first and second gate electrodes, which help define both the planar FET and the finFET.

Career Highlights

Li-Jung Liu is currently affiliated with Taiwan Semiconductor Manufacturing Company Limited, one of the leading companies in advanced semiconductor manufacturing. His role at the company allows him to drive innovation in FET technologies that are pivotal for various electronic applications.

Collaborations

Throughout his career, Li-Jung Liu has collaborated with esteemed colleagues, including Shu-Hui Wang and Li-Feng Teng. These partnerships have enabled him to refine his inventions and contribute effectively to the semiconductor industry.

Conclusion

With a solid foundation in semiconductor technology and a proven track record of innovation, Li-Jung Liu exemplifies the drive and creativity of modern inventors. His contributions to the development of advanced FET technologies promise to enhance the performance and efficiency of electronic devices for years to come.