The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2018
Filed:
Apr. 26, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); H01L 21/28556 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a plurality of gate spacers and a gate stack. The gate spacers are over the semiconductor substrate. The gate stack is over the semiconductor substrate and between the gate spacers. The gate stack includes a carbon-containing titanium nitride layer and an N-work function conductor layer over the carbon-containing titanium nitride layer.