The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jun. 29, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a filling conductor, an N-work function conductor layer and a gate dielectric layer. The filling conductor is over the semiconductor substrate. The N-work function conductor layer wraps around the filling conductor. The N-work function conductor layer comprises chlorine. The gate dielectric layer is between the N-work function conductor layer and the semiconductor.