Taipei, Taiwan

Li-Hsuan Yeh

This inventor holds 5 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Hsuan Yeh. Retrieved from https://idiyas.com/inventor/li-hsuan-yeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Taipei, TW (2021)
  • New Taipei, TW (2018 - 2023)

Company Filing History:


Years Active: 2018-2023

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5 patents (USPTO):Explore Patents

Title: Innovations of Li-Hsuan Yeh in Semiconductor Technology

Introduction

Li-Hsuan Yeh is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on innovative semiconductor structures and manufacturing methods that enhance device performance.

Latest Patents

One of Li-Hsuan Yeh's latest patents is titled "Semiconductor structure and method for manufacturing thereof." This patent describes a semiconductor structure that includes a substrate, a diode region, and a dummy stripe. The substrate features a first surface, with the diode region embedded within it. The diode region consists of a first implant region of a first conductivity type and a second implant region of a second conductivity type, both located near the first surface. The dummy stripe is positioned on the first surface, situated between the first and second implant regions. Additionally, a method for manufacturing this semiconductor structure is provided.

Another notable patent is "Recessed STI as the gate dielectric of HV device." This patent outlines a method that involves forming an isolation region extending into a semiconductor substrate. The process includes etching a top portion of the isolation region to create a recess, followed by the formation of a gate stack that extends into the recess and overlaps a lower portion of the isolation region. The method also details the formation of a source region and a drain region on opposite sides of the gate stack, which are integral components of a Metal-Oxide-Semiconductor (MOS) device.

Career Highlights

Li-Hsuan Yeh is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Li-Hsuan Yeh has collaborated with notable colleagues, including Kong-Beng Thei and Fu-Jier Fan. These collaborations have fostered a productive environment for innovation and development in their field.

Conclusion

Li-Hsuan Yeh's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as a key innovator in the industry. His advancements continue to influence the development of semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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