The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Nov. 15, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yi-Huan Chen, Hsin Chu, TW;
Fu-Jier Fan, Hsinchu, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Ker-Hsiao Huo, Zhubei, TW;
Li-Hsuan Yeh, New Taipei, TW;
Yu-Bin Zhao, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to an organic light emitting device including a logic device that comprises a dummy pattern and a merged spacer, and an associated fabrication method. In some embodiments, the organic light emitting device is disposed over a substrate. The logic device is coupled to the organic light emitting device, and comprises a pair of source/drain regions disposed within the substrate and separated by a channel region. A gate structure overlies the channel region and comprises a gate electrode and a dummy pattern separated from the gate electrode by a merged spacer. By arranging the dummy pattern and the merged spacer between the gate electrode and the source/drain regions, a distance between the gate electrode and the source/drain region is enlarged, and therefore reducing the gate induced drain leakage (GIDL) effect.