The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2023

Filed:

Mar. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ta-Wei Lin, Chiayi County, TW;

Fu-Hsiung Yang, Taoyuan County, TW;

Ching-Hsun Hsu, Hsinchu, TW;

Yu-Lun Lu, Hsinchu, TW;

Li-Hsuan Yeh, New Taipei, TW;

Tsung-Chieh Tsai, Hsin-Chu County, TW;

Kong-Beng Thei, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/6609 (2013.01); H01L 29/66545 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a diode region, and a dummy stripe. The substrate has a first surface. The diode region is in the substrate. The diode region includes a first implant region of a first conductivity type approximate to the first surface, and a second implant region of a second conductivity type approximate to the first surface and surrounded by the first implant region. The dummy stripe is on the first surface and located between the first implant region and the second implant region. A method for manufacturing a semiconductor structure is also provided.


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