The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jul. 25, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Huan Chen, Hsinchu, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Fu-Jier Fan, Hsinchu, TW;
Ker-Hsiao Huo, Zhubei, TW;
Kau-Chu Lin, Taichung, TW;
Li-Hsuan Yeh, New Taipei, TW;
Szu-Hsien Liu, Zhubei, TW;
Yi-Sheng Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming an isolation region extending into a semiconductor substrate, etching a top portion of the isolation region to form a recess in the isolation region, and forming a gate stack extending into the recess and overlapping a lower portion of the isolation region. A source region and a drain region are formed on opposite sides of the gate stack. The gate stack, the source region, and the drain region are parts of a Metal-Oxide-Semiconductor (MOS) device.