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For the Inventor, By the Inventor

Kyungki-do, South Korea

Kyu-pil Lee

USPTO Granted Patents = 11 

Average Co-Inventor Count = 1.3

ph-index = 7

Forward Citations = 99(Granted Patents)


Location History:

  • Suwon, KR (1994 - 1995)
  • Kyungki-do, KR (1997 - 2000)
  • Gyeonggi-do, KR (2016)
  • Seongnam-si, KR (2022)

Company Filing History:

goldMedal11 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1994-2022

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11 patents (USPTO):Explore Patents
1. 11251307 - Device comprising 2D material (2022-02-15),
2. 9349724 - Semiconductor device having capacitors (2016-05-24),
3. 6162672 - Method for forming integrated circuit memory devices with high and low (2000-12-19),
4. 6074918 - Methods of fabrication DRAM transistor cells with a self-aligned storage (2000-06-13),
5. 5969395 - Integrated circuit memory devices with high and low dopant concentration (1999-10-19),
6. 5959322 - Isolated SOI memory structure with vertically formed transistor and (1999-09-28),
7. 5936272 - DRAM transistor cells with a self-aligned storage electrode contact (1999-08-10),
8. 5748521 - Metal plug capacitor structures for integrated circuit devices and (1998-05-05),
9. 5663092 - Methods of fabricating a transistor cell with a high aspect ratio buried (1997-09-02),
10. 5466628 - Method of manufacturing trench capacitor with a recessed field oxide (1995-11-14),
11. 5324680 - Semiconductor memory device and the fabrication method thereof (1994-06-28),

Title: Kyu-pil Lee: Innovator in Semiconductor Technology

Introduction

Kyu-pil Lee is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on innovative devices that utilize two-dimensional materials and advanced capacitor designs.

Latest Patents

One of Kyu-pil Lee's latest patents is a device comprising a 2D material. This device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on the upper end of the insulating pattern, and a two-dimensional (2D) material layer on a side surface of the insulating pattern. The gate insulating layer covers the 2D material layer, and a gate electrode contacts the gate insulating layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

Another notable patent is for a semiconductor device having capacitors. This device includes at least one first capacitor and at least one second capacitor. The first capacitor features a first storage node with a cylindrical shape, while the second capacitor includes a lower second storage node with a hollow pillar shape and an upper second storage node that extends upward from the lower second storage node.

Career Highlights

Kyu-pil Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His innovative designs and patents have positioned him as a key figure in the industry.

Collaborations

Kyu-pil Lee has collaborated with notable coworkers such as Joo-young Lee and Yong-jik Park. Their combined expertise has contributed to the advancement of semiconductor technologies.

Conclusion

Kyu-pil Lee's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced electronic devices.

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