The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Dec. 10, 2012
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Cheon-bae Kim, Gyeonggi-do, KR;

Yong-chul Oh, Gyeonggi-do, KR;

Kuk-han Yoon, Gyeonggi-do, KR;

Kyu-pil Lee, Gyeonggi-do, KR;

Jong-ryul Jun, Gyeonggi-do, KR;

Chang-hyun Cho, Gyeonggi-do, KR;

Gyo-young Jin, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/02 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0805 (2013.01); H01L 27/0207 (2013.01); H01L 27/108 (2013.01); H01L 28/91 (2013.01); H01L 27/10852 (2013.01);
Abstract

A semiconductor device including at least one first capacitor and at least one second capacitor. The at least one first capacitor includes a first storage node having a cylindrical shape. The at least one second capacitor includes a lower second storage node having a hollow pillar shape including a hollow portion, and an upper second storage node having a cylindrical shape and extending upward from the lower second storage node.


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