IDiyas

For the Inventor, By the Inventor

Kyungki-do, South Korea

Yong-chul Oh

USPTO Granted Patents = 20

Average Co-Inventor Count = 2.6

ph-index = 8

Forward Citations = 323(Granted Patents)


Location History:

  • Kyunggi-do, KR (2000 - 2005)
  • Kyungki-do, KR (2003 - 2010)
  • Gyeonggi-do, KR (2007 - 2016)

Company Filing History:

goldMedal19 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 24 
 
Samung Electronics Co., Ltd
 patents

Years Active: 2000-2016

where 'Filed Patents' based on already Granted Patents

20 patents (USPTO):
1. 9349724 - Semiconductor device having capacitors (2016-05-24),
2. 8053832 - Capacitor-less DRAM device (2011-11-08),
3. 7977725 - Integrated circuit semiconductor device including stacked level transistors (2011-07-12),
4. 7842572 - Methods of manufacturing semiconductor devices with local recess channel transistors (2010-11-30),
5. 7833864 - Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate (2010-11-16),
6. 7737512 - Integrated circuit devices having uniform silicide junctions (2010-06-15),
7. 7586150 - Semiconductor devices with local recess channel transistors and methods of manufacturing the same (2009-09-08),
8. 7501668 - Semiconductor memory devices having contact pads with silicide caps thereon (2009-03-10),
9. 7329927 - Integrated circuit devices having uniform silicide junctions (2008-02-12),
10. 7223649 - Method of fabricating transistor of DRAM semiconductor device (2007-05-29),
11. 7144798 - Semiconductor memory devices having extending contact pads and related methods (2006-12-05),
12. 6974752 - Methods of fabricating integrated circuit devices having uniform silicide junctions (2005-12-13),
13. 6844240 - Semiconductor device having trench isolation (2005-01-18),
14. 6670689 - Semiconductor device having shallow trench isolation structure (2003-12-30),
15. 6642125 - Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same (2003-11-04),

Title: Yong-chul Oh: Pioneering Innovations in Semiconductor Technology

Introduction

Yong-chul Oh, a notable inventor based in Kyungki-do, South Korea, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, his innovative designs and devices have garnered attention in the industry, showcasing his expertise and creativity.

Latest Patents

Among his latest inventions is the "Semiconductor device having capacitors", which encompasses a novel structure designed to enhance functionality. This device incorporates at least one first capacitor, featuring a cylindrical-shaped storage node, and a second capacitor with a lower storage node characterized by a hollow pillar shape, along with an upper cylindrical storage node. Furthermore, he has developed a "Capacitor-less DRAM device", which includes an insulating layer formed on a semiconductor substrate, a silicon layer with an internal trench, and an offset spacer. This design optimizes space and efficiency, making strides in DRAM technology.

Career Highlights

Yong-chul Oh has worked with esteemed organizations, including Samsung Electronics Co., Ltd., where he applied his innovative skills to develop groundbreaking semiconductor technologies. His expertise has aided in transforming concepts into practical applications, solidifying his reputation as a leader in his field.

Collaborations

Throughout his career, Yong-chul has collaborated with accomplished professionals such as Se-myeong Jang and Gyo-young Jin. Together, they have pushed the boundaries of semiconductor research and development, fostering advancements that impact various technological applications.

Conclusion

Yong-chul Oh's impressive array of patents and innovative spirit positions him as an influential figure in semiconductor technology. His contributions to this field not only demonstrate his engineering capabilities but also inspire future inventors to pursue groundbreaking ideas.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…