The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Nov. 21, 2001
Yong-Chul Oh, Kyungki-do, KR;
Jun-Yong Roh, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor device having a shallow trench isolation (STI) structure, which reduces leakage current between adjacent P-FETs, and a manufacturing method thereof. The device comprises a semiconductor substrate having first and second trenches, the first trench being formed in a cell area; a first sidewall oxide layer formed on inner surfaces of the first and second trenches; a second sidewall oxide layer formed on a surface of the first sidewall oxide layer in the second trench; a first relief liner formed on the first sidewall oxide layer in the first trench; a second relief liner formed on the first relief liner in the first trench, and also formed on the second sidewall oxide layer in the second trench; and a dielectric material formed within the first and second trenches.