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For the Inventor, By the Inventor

Seoul, South Korea

Gyo-young Jin

USPTO Granted Patents = 22 

Average Co-Inventor Count = 4.5

ph-index = 7

Forward Citations = 199(Granted Patents)


Location History:

  • Kyungki-do, KR (2003 - 2010)
  • Seoul, KR (2006 - 2016)

Company Filing History:

goldMedal21 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 24 
 
Samung Electronics Co., Ltd
 patents

Years Active: 2003-2016

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22 patents (USPTO):
1. 9349724 - Semiconductor device having capacitors (2016-05-24),
2. 9276074 - Methods of fabricating semiconductor devices having buried channel array (2016-03-01),
3. 8884340 - Semiconductor devices including dual gate electrode structures and related methods (2014-11-11),
4. 8785998 - Semiconductor device having vertical channel transistor and methods of fabricating the same (2014-07-22),
5. 8492832 - Semiconductor device (2013-07-23),
6. 8362536 - Semiconductor device having vertical channel transistor and methods of fabricating the same (2013-01-29),
7. 8264022 - Semiconductor device including contact plug and associated methods (2012-09-11),
8. 7833864 - Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate (2010-11-16),
9. 7737512 - Integrated circuit devices having uniform silicide junctions (2010-06-15),
10. 7622778 - Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void (2009-11-24),
11. 7501668 - Semiconductor memory devices having contact pads with silicide caps thereon (2009-03-10),
12. 7465988 - Semiconductor device and method of manufacturing the same (2008-12-16),
13. 7329927 - Integrated circuit devices having uniform silicide junctions (2008-02-12),
14. 7297596 - Method of manufacturing a semiconductor device having a switching function (2007-11-20),
15. 7288823 - Double gate field effect transistor and method of manufacturing the same (2007-10-30),

Title: The Innovations of Gyo-young Jin: A Semiconductor Pioneer from Seoul

Introduction: Gyo-young Jin is a notable inventor based in Seoul, South Korea, recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 22 patents, Jin's work showcases his innovative approach to the design and fabrication of semiconductor devices.

Latest Patents: Among his latest patents, Jin has developed a semiconductor device featuring capacitors designed for improved functionality. This semiconductor device incorporates at least one first capacitor with a cylindrical shape and a second capacitor that consists of a lower storage node with a hollow pillar shape, along with an upper cylindrical storage node extending from it. Additionally, he has patented methods for fabricating semiconductor devices that incorporate buried channel arrays. This method includes the formation of specialized parallel field regions and gate capping layers within a substrate, streamlining the process and enhancing the performance of semiconductor components.

Career Highlights: Gyo-young Jin has made a significant impact in the tech industry, particularly through his tenure with prominent companies such as Samsung Electronics Co., Ltd. His innovative methods and devices have pushed the boundaries of semiconductor design, leading to greater efficiency and performance in electronic devices.

Collaborations: Throughout his career, Jin has collaborated with various professionals in his field, including notable colleagues such as Yong-chul Oh and Se-myeong Jang. These collaborations have fostered a creative environment that has enhanced the development of new technologies.

Conclusion: Gyo-young Jin's contributions to semiconductor technology have positioned him as a vital figure in the industry. His 22 patents reflect a dedication to innovation and excellence. As advancements in technology continue, inventors like Jin play a crucial role in shaping the future of electronic devices.

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