The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Dec. 21, 2012
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyung-woo Chung, Seoul, KR;
Yong-chul Oh, Suwon-si, KR;
Yoo-sang Hwang, Suwon-si, KR;
Gyo-young Jin, Seoul, KR;
Hyeong-sun Hong, Seongnam-si, KR;
Dae-ik Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor memory device includes a first pair of pillars extending from a substrate to form vertical channel regions, the first pair of pillars having a first pillar and a second pillar adjacent to each other, the first pillar and the second pillar arranged in a first direction, a first bit line disposed on a bottom surface of a first trench formed between the first pair of pillars, the first bit line extending in a second direction that is substantially perpendicular to the first direction, a first contact gate disposed on a first surface of the first pillar with a first gate insulating layer therebetween, a second contact gate disposed on a first surface of the second pillar with a second gate insulating layer therebetween, the first surface of the first pillar and the first surface of the second pillar face opposite directions, and a first word line disposed on the first contact gate and a second word line disposed on the second contact gate, the word lines extending in the first direction.