The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Oct. 12, 2007
Sung-sam Lee, Gyeonggi-do, KR;
Yong-tae Kim, Gyeonggi-do, KR;
Mi-youn Kim, Gyeonggi-do, KR;
Gyo-young Jin, Seoul, KR;
Dae-won Ha, Seoul, KR;
Yun-gi Kim, Gyeonggi-do, KR;
Sung-Sam Lee, Gyeonggi-do, KR;
Yong-Tae Kim, Gyeonggi-do, KR;
Mi-Youn Kim, Gyeonggi-do, KR;
Gyo-Young Jin, Seoul, KR;
Dae-Won Ha, Seoul, KR;
Yun-Gi Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.