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For the Inventor, By the Inventor

Seoul, South Korea

Dae-Won Ha

This inventor holds 25 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2000-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae-Won Ha. Retrieved from https://idiyas.com/inventor/dae-won-ha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 96.0

Average Co-Inventor Count = 2.3

ph-index = 6

Forward Citations = 425(Granted Patents)


Company Filing History:

goldMedal25 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2000-2024

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Areas of Expertise:
Integrated Circuit
Semiconductor Fabrication
Multi-Level Memory
Phase Change Memory
NAND-Type Memory
Dummy Gate Structure
Raised Semiconductor Patterns
Non-Volatile Memory
25 patents (USPTO):Explore Patents
1. 11894376 - Integrated circuit devices and methods of fabricating such devices (2024-02-06),
2. 10978453 - Integrated circuit devices and methods of fabricating such devices (2021-04-13),
3. 10177148 - Integrated circuit devices and methods of fabricating such devices (2019-01-08),
4. 9711505 - Semiconductor devices having dummy gate structure for controlling channel stress (2017-07-18),
5. 9331199 - Semiconductor device (2016-05-03),
6. 8709834 - Methods of fabricating semiconductor device (2014-04-29),
7. 8451656 - Multi-level memory devices and methods of operating the same (2013-05-28),
8. 8329539 - Semiconductor device having recessed gate electrode and method of fabricating the same (2012-12-11),
9. 8213223 - Multi-level memory devices and methods of operating the same (2012-07-03),
10. 8143674 - Semiconductor devices having resistors (2012-03-27),
11. 8050083 - Phase change memory device and write method thereof (2011-11-01),
12. 8036018 - Non-volatile memory devices including stacked NAND-type resistive memory cell strings (2011-10-11),
13. 8004023 - Semiconductor device and method of fabricating the same (2011-08-23),
14. 7923810 - Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same (2011-04-12),
15. 7871890 - Methods of fabricating semiconductor devices having resistors (2011-01-18),

Title: The Innovative Contributions of Dae-Won Ha

Introduction: Dae-Won Ha, based in Seoul, South Korea, stands out as a prolific inventor with an impressive portfolio of 25 patents. His work primarily revolves around integrated circuit technology, showcasing advancements that are pivotal to modern electronics.

Latest Patents: Among his latest innovations are breakthroughs in integrated circuit devices and methods of fabrication. His patents describe a unique integrated circuit device comprising multiple channel regions and source/drain regions. The design includes an insulating structure that defines several gate spaces, featuring a gate stack structure with a work function metal-containing layer. Notably, an isolation stack structure is included, ensuring electrical isolation of specific portions of the active region. These patents demonstrate his innovative approach to enhancing circuit efficiency and functionality.

Career Highlights: Dae-Won Ha has made significant strides in his career at Samsung Electronics Co., Ltd., contributing to various essential projects. His patents not only highlight his inventiveness but also mark his vital role in advancing technology within the company and the broader electronics industry.

Collaborations: Throughout his career, Dae-Won Ha has collaborated with esteemed colleagues, including Gwan-Hyeob Koh and Byoung-Hak Hong. These partnerships highlight the importance of teamwork in driving innovation and developing cutting-edge technologies in integrated circuits.

Conclusion: Dae-Won Ha's contributions to the field of integrated circuit design position him as a key player in the electronics sector. With numerous patents to his name and collaborations with other talented inventors, his work continues to influence technological advancements, paving the way for future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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