The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
May. 08, 2006
Dae-won Ha, Seoul, KR;
Kong-soo Lee, Gyeonggi-do, KR;
Sung-sam Lee, Yongin-si, KR;
Sang-hyun Lee, Seoul, KR;
Min-young Shim, Suwon-si, KR;
Dae-Won Ha, Seoul, KR;
Kong-Soo Lee, Gyeonggi-do, KR;
Sung-Sam Lee, Yongin-si, KR;
Sang-Hyun Lee, Seoul, KR;
Min-Young Shim, Suwon-si, KR;
Abstract
In a semiconductor device having a recessed gate electrode and a method of fabricating the same, a channel trench is formed in a semiconductor substrate by etching the semiconductor substrate. A first semiconductor layer is formed on the semiconductor substrate that fills the channel trench. A second semiconductor layer is formed on the first semiconductor layer, the second semiconductor layer having a lower impurity concentration than the first semiconductor layer.