The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Mar. 05, 2012
Sang-hyun Hong, Seoul, KR;
Jung-hyuk Lee, Hwaseong-si, KR;
Su-jin Ahn, Hwaseong-si, KR;
Dae-won Ha, Seoul, KR;
Sang-Hyun Hong, Seoul, KR;
Jung-Hyuk Lee, Hwaseong-si, KR;
Su-Jin Ahn, Hwaseong-si, KR;
Dae-Won Ha, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device includes providing a wafer, forming a memory device which includes phase change material layer on the wafer, completing a wafer level process of manufacturing the semiconductor device, and performing a thermal treatment process on the wafer to densify the phase change material. To this end, the process temperature of the thermal treatment is higher than the crystallization temperature of the phase change material and lower than the melting point of the phase change material.