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For the Inventor, By the Inventor

Tainan, Taiwan

Kuo-Reay Peng

USPTO Granted Patents = 23

Average Co-Inventor Count = 4.0

ph-index = 12

Forward Citations = 447(Granted Patents)


Location History:

  • FounSan, TW (1998)
  • Kaoushing, TW (1999)
  • Fung-San, TW (1999)
  • Kaoushuy, TW (1999)
  • Kuoshung, TW (1999)
  • Faung-San, TW (1998 - 2000)
  • Faung-Shan, TW (2000)
  • TarnySan, TW (2000)
  • Fangshan, TW (2001)
  • Tansung, TW (2002)
  • Funsung, TW (2001 - 2003)
  • Tainan, TW (2002 - 2003)
  • Hsin-chu, TW (1999 - 2005)
  • Feng-Shan, TW (2005)

Company Filing History:

goldMedal23 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 1998-2005

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23 patents (USPTO):Explore Patents
1. 6881996 - Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer (2005-04-19),
2. 6876041 - ESD protection component (2005-04-05),
3. 6812088 - Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer (2004-11-02),
4. 6667217 - Method of fabricating a damascene copper inductor structure using a sub-0.18 um CMOS process (2003-12-23),
5. 6661060 - Low capacitance ESD protection device (2003-12-09),
6. 6614693 - Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM (2003-09-02),
7. 6610262 - Depletion mode SCR for low capacitance ESD input protection (2003-08-26),
8. 6472721 - Dual damascene interconnect structures that include radio frequency capacitors and inductors (2002-10-29),
9. 6448123 - Low capacitance ESD protection device (2002-09-10),
10. 6329234 - Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow (2001-12-11),
11. 6303454 - Process for a snap-back flash EEPROM cell (2001-10-16),
12. 6122201 - Clipped sine wave channel erase method to reduce oxide trapping charge (2000-09-19),
13. 6055183 - Erase method of flash EEPROM by using snapback characteristic (2000-04-25),
14. 6049486 - Triple mode erase scheme for improving flash EEPROM cell threshold (2000-04-11),
15. 6049484 - Erase method to improve flash EEPROM endurance by combining high voltage (2000-04-11),

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