The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Jul. 24, 2000
Ssu-Pin Ma, Taipei, TW;
Chun-Hon Chen, Hsin-chu, TW;
Ta-Hsun Yeh, Hsin-chu, TW;
Kuo-Reay Peng, Funsung, TW;
Heng-Ming Hsu, Hsin-chu, TW;
Kong-Beng Thei, Hsin-chu, TW;
Chi-Wu Chou, Hsin-chu, TW;
Yen-Shih Ho, Hsin-chu, TW;
Taiwan Semiconductor Manufactuirng Company, Hsin-chu, TW;
Abstract
In many mixed-signal or radio frequency Rf applications, inductors and capacitors are needed at the same time. For a high performance inductor devices, a thick metal layer is needed to increase performance, usually requiring an extra masking process. The present invention describes both a structure and method of fabricating both copper metal-insulator-metal (MIM) capacitors and thick metal inductors, simultaneously, with only one mask, for high frequency mixed-signal or Rf, CMOS applications, in a damascene and dual damascene trench/via process. High performance device structures formed by this invention include: parallel plate capacitor bottom metal (CBM) electrodes and capacitor top metal (CTM) electrodes, metal-insulator-metal (MIM) capacitors, thick inductor metal wiring, interconnects and contact vias.