Company Filing History:
Years Active: 2016-2020
Title: Innovations of Kuan-Hsun Chen
Introduction
Kuan-Hsun Chen is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of nonvolatile memory technology, holding a total of four patents. His work focuses on improving the performance and efficiency of memory cells, which are crucial in modern electronic devices.
Latest Patents
One of Kuan-Hsun Chen's latest patents is a method of programming a nonvolatile memory cell. This method involves a substrate and a series of transistors, including a select transistor, a following gate transistor, and an anti-fuse transistor. The programming technique utilizes a variable DC voltage source to create a trapping path within the first gate oxide layer, which is then crystallized into a silicon filament. Another significant patent he holds is for a nonvolatile memory cell designed to enhance program performance. This invention features a select gate transistor, a following gate transistor, and an antifuse varactor arranged in series on an active area, with specific ion wells to optimize functionality.
Career Highlights
Kuan-Hsun Chen is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His expertise and inventions have contributed to advancements in nonvolatile memory solutions, making a lasting impact on the industry.
Collaborations
Kuan-Hsun Chen has collaborated with notable colleagues, including Ting-Ting Su and Ming-Shan Lo. Their combined efforts in research and development have furthered the progress of memory technology.
Conclusion
Kuan-Hsun Chen's work in nonvolatile memory technology exemplifies innovation and dedication. His patents reflect a commitment to enhancing electronic memory systems, and his contributions are invaluable to the field.