The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Jul. 02, 2017
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Kuan-Hsun Chen, Tainan, TW;
Ting-Ting Su, Taipei, TW;
Assignee:
eMemory Technology Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/112 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 27/0629 (2013.01);
Abstract
A non-volatile memory cell is disclosed. A select gate transistor, a following gate transistor, and an antifuse varactor are coupled in series on an active area. The following gate transistor is disposed between the select gate transistor and the antifuse varactor. A first ion well and a second ion well having the first conductivity type are provided in the active area. The following gate transistor partially overlaps with the first ion well. The second ion well has a doping concentration that is smaller than that of the first ion well.