The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Feb. 16, 2016
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Ping-Yu Kuo, Pingtung County, TW;

Kuan-Hsun Chen, Tainan, TW;

Chun-Hung Lin, Hsinchu, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01);
Abstract

A one time programming non-volatile memory cell includes a first floating gate transistor with a single gate structure, an isolation transistor, and a select transistor. A first terminal of the first floating gate transistor is connected with a second control line. A floating gate of the first floating gate transistor is in a floating state. A first terminal of the isolation transistor is connected with a second terminal of the first floating gate transistor. An isolation gate of the isolation transistor is connected with an isolation line. A first terminal of the select transistor is connected with a second terminal of the isolation transistor. A second terminal of the select transistor is connected with a first control line. A select transistor of the select transistor is connected with a word line.


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