Tokyo, Japan

Koichiro Okumura

This inventor holds 14 USPTO granted patents and 1 published patent application. Top assignees: Nec Corporation, Nippon Electric Co., Ltd.. Active years: 1981-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koichiro Okumura. Retrieved from https://idiyas.com/inventor/koichiro-okumura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14 

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 7

Forward Citations = 252(Granted Patents)


Company Filing History:


Years Active: 1981-1999

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14 patents (USPTO):Explore Patents

Title: Unveiling the Innovation: Koichiro Okumura, Tokyo's Trailblazing Inventor

Introduction: Meet Koichiro Okumura, a brilliant inventor hailing from Tokyo, Japan, whose remarkable contributions have left a lasting impact on the world of technology and semiconductor devices.

Latest Patents: Okumura's latest patents include the groundbreaking "SOI-type semiconductor device with variable threshold voltages." This invention revolutionizes the functionality of semiconductor devices by adjusting threshold voltages based on the operational mode, enhancing efficiency and performance.

Career Highlights: With a portfolio boasting an impressive 14 patents, Koichiro Okumura has established himself as a leading figure in the field of semiconductor technology. Notably, he has worked with renowned companies such as NEC Corporation and Nippon Electric Co., Ltd., consistently pushing the boundaries of innovation.

Collaborations: Throughout his illustrious career, Okumura has collaborated with esteemed coworkers such as Susumu Kurosawa and Masayoshi Ohkawa. Together, they have spearheaded innovative projects and research initiatives that have reshaped the landscape of semiconductor technology.

Conclusion: Koichiro Okumura's ingenuity and relentless pursuit of excellence have cemented his legacy as a visionary inventor. His groundbreaking patents and collaborations underscore his significant contributions to the realm of semiconductor devices, inspiring future generations of innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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