The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1984
Filed:
Aug. 24, 1981
Koichiro Okumura, Tokyo, JP;
Nippon Electric Co., Ltd., Tokyo, JP;
Abstract
An improved protective device for the gate insulation of an integrated-gate field effect transistor (IGFET) is disclosed that does not breakdown under spike-like input voltages. The protective device is formed on the same semiconductor chip as an operative IGFET and includes a resistor connected between the input terminal and the operative IGFET's gate, a protective IGFET whose drain and gate are both connected to the operative IGFET's gate, and another resistor connected between the protective IGFET's source and a constant voltage source.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile