San Antonio, TX, United States of America

Kiyoshi Mori

This inventor holds 15 USPTO granted patents. Top assignees: Texas Instruments Corporation, Sony Corporation, Sony Electronics Inc. Active years: 1991-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kiyoshi Mori. Retrieved from https://idiyas.com/inventor/kiyoshi-mori-ul7kjy39

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 11

Forward Citations = 350(Granted Patents)


Location History:

  • Stafford, TX (US) (1991 - 1992)
  • San Antonio, TX (US) (1992 - 2001)

Company Filing History:


Years Active: 1991-2001

Loading Chart...
15 patents (USPTO):Explore Patents

Title: Kiyoshi Mori: Innovator in Vertical Floating Gate Transistors

Introduction

Kiyoshi Mori is a prominent inventor based in San Antonio, TX (US), known for his significant contributions to the field of semiconductor technology. He holds a total of 15 patents, showcasing his innovative spirit and technical expertise. His work primarily focuses on the development of advanced transistor designs that enhance performance and efficiency in electronic devices.

Latest Patents

One of Kiyoshi Mori's latest patents is the vertical floating gate transistor with an epitaxial channel. This innovative design features an epitaxially formed channel situated between the lower and upper source/drain regions. The transistor includes a floating gate electrode positioned in a trench that extends vertically through these regions, along with a control or programming gate electrode located above and separated from the floating gate. The process for forming this vertical floating gate transistor involves implanting the substrate to create the lower source/drain region, followed by the formation of an epitaxial layer that provides the channel. The upper source/drain region is then implanted above the lower source/drain region and the epitaxial channel layer. This method allows for independent control of the resistivity of the lower source/drain region, facilitating device symmetry and improving performance. The epitaxial channel layer also offers enhanced doping uniformity, which lowers channel length and increases yield.

Career Highlights

Throughout his career, Kiyoshi Mori has worked with notable companies such as Texas Instruments Corporation and Sony Corporation. His experience in these leading technology firms has contributed to his expertise in semiconductor innovations and has allowed him to develop groundbreaking technologies.

Collaborations

Kiyoshi has collaborated with various professionals in the field, including his coworker Shailesh R Kadakia. These collaborations have further enriched his work and have led to advancements in semiconductor technology.

Conclusion

Kiyoshi Mori's contributions to the field of vertical floating gate transistors demonstrate his innovative approach and technical prowess. His patents reflect a commitment to enhancing electronic device performance and efficiency. His work continues to influence the semiconductor industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…